Specification	BD434S

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	40 hFE
Frequency - Transition	3 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	36 W
Supplier Device Package	TO-126-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	22 V

BD434 Series

PNP Epitaxial Silicon Transistor

Part	Mounting Type	Frequency - Transition	Package / Case	Operating Temperature	Transistor Type	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)
ON Semiconductor BD434S	Through Hole	3 MHz	TO-126-3 TO-225AA	150 °C	PNP	36 W	40 hFE	TO-126-3	100 µA	500 mV	4 A	22 V
ON Semiconductor BD434S	Through Hole	3 MHz	TO-126-3 TO-225AA	150 °C	PNP	36 W	40 hFE	TO-126-3	100 µA	500 mV	4 A	22 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 0.16
Digikey	Bulk	972	$ 0.31
		972	$ 0.31

General part information

PNP Epitaxial Silicon Transistor

Technical documentation and resources