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Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 630 mA, 630 mA, 0.29 ohm
Discrete Semiconductor Products

NVTJD4001NT1G

NRND
ON Semiconductor

DUAL MOSFET, N CHANNEL, 30 V, 30 V, 250 MA, 250 MA, 1 OHM

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Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 630 mA, 630 mA, 0.29 ohm
Discrete Semiconductor Products

NVTJD4001NT1G

NRND
ON Semiconductor

DUAL MOSFET, N CHANNEL, 30 V, 30 V, 250 MA, 250 MA, 1 OHM

Technical Specifications

Parameters and characteristics for this part

SpecificationNVTJD4001NT1G
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C250 mA
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs [Max]1.3 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]33 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-TSSOP, SC-88, SOT-363
Power - Max [Max]272 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs1.5 Ohm
Supplier Device PackageSC70-6, SC-88, SOT-363
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.34
10$ 0.21
100$ 0.13
500$ 0.10
1000$ 0.09
Digi-Reel® 1$ 0.34
10$ 0.21
100$ 0.13
500$ 0.10
1000$ 0.09
Tape & Reel (TR) 3000$ 0.08
6000$ 0.07
NewarkEach (Supplied on Full Reel) 3000$ 0.12
6000$ 0.10
12000$ 0.09
18000$ 0.08
30000$ 0.08
ON SemiconductorN/A 1$ 0.10

Description

General part information

NVTJD4001N Series

Automotive Power MOSFET ideal for low power applications. 30V, 250mA, 1.5 Ohm, Dual N-Channel SC−88, Logic Level. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.