Discrete Semiconductor Products

PBLS1502Y,115

LTB

TRANS PREBIAS 1NPN 1PNP 6TSSOP

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Discrete Semiconductor Products

LTB

TRANS PREBIAS 1NPN 1PNP 6TSSOP

Technical Specifications

Parameters and characteristics for this part

Specification	PBLS1502Y,115

Current - Collector (Ic) (Max)	100 mA, 500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	30, 150
Frequency - Transition	280 MHz
Mounting Type	Surface Mount
Package / Case	SOT-363, SC-88, 6-TSSOP
Power - Max [Max]	300 mW
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	4.7 kOhms
Supplier Device Package	6-TSSOP
Transistor Type	1 PNP, 1 NPN Pre-Biased
Vce Saturation (Max) @ Ib, Ic	150 mV, 250 mV
Voltage - Collector Emitter Breakdown (Max)	15 V, 50 V

Part	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Mounting Type	Current - Collector (Ic) (Max)	Resistor - Emitter Base (R2)	Transistor Type	Frequency - Transition	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Resistor - Base (R1)	Voltage - Collector Emitter Breakdown (Max)	Package / Case
Nexperia USA Inc. PBLS1502Y,115	150 mV 250 mV	100 nA	1 µA	6-TSSOP	Surface Mount	100 mA 500 mA	4.7 kOhms	1 NPN Pre-Biased 1 PNP	280 MHz	300 mW	30 150	4.7 kOhms	15 V 50 V	6-TSSOP SC-88 SOT-363

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 15V 100mA, 500mA 280MHz 300mW Surface Mount 6-TSSOP

Technical documentation and resources