Specification	NTMFS0D7N04XLT1G

Current - Continuous Drain (Id) @ 25°C	349 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	96 nC
Input Capacitance (Ciss) (Max) @ Vds	7090 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN, 5 Leads
Power Dissipation (Max)	167 W
Supplier Device Package	5-DFN (5x6)
Supplier Device Package	8-SOFL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

NTMFS0D7N04XL Series

Power MOSFET, Single, N-Channel, 40V, 0.7mΩ, 349A, SO8-FL 5x6

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Supplier Device Package	Vgs (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id [Max]	Package / Case	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)
ON Semiconductor NTMFS0D7N04XLT1G	40 V	5-DFN (5x6)	8-SOFL	20 V	N-Channel	7090 pF	2.2 V	8-PowerTDFN 5 Leads	MOSFET (Metal Oxide)	349 A	-55 °C	175 ░C	Surface Mount	96 nC	4.5 V 10 V	167 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.02
		10	$ 1.96
		100	$ 1.36
		500	$ 1.10
	Digi-Reel®	1	$ 3.02
		10	$ 1.96
		100	$ 1.36
		500	$ 1.10
	Tape & Reel (TR)	1500	$ 0.97
		3000	$ 0.96
Newark	Each (Supplied on Cut Tape)	1	$ 4.30
ON Semiconductor	N/A	1	$ 1.07

Description

General part information

NTMFS0D7N04XL Series

The latest 40V logic gate level power MOSFET technology with best-in-class Figure-of-Merit for switching application. Lower on-resistance and less output capacitance can reduce the conduction and switching loss to accomplish higher efficiency requirement. Smaller peak reverse recovery current with good softness behavior can perform lower voltage spike with better EMI performance.