Specification	IXFH22N65X2

Current - Continuous Drain (Id) @ 25°C	22 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds	2310 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	390 W
Rds On (Max) @ Id, Vgs	160 mOhm
Supplier Device Package	TO-247 (IXTH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

IXFH22N60P3 Series

DiscMSFT NChUltraJnctn X2Class TO-247AD

Part	FET Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Technology	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Littelfuse/Commercial Vehicle Products IXFH22N60P3	N-Channel	30 V	10 V	5 V	MOSFET (Metal Oxide)	22 A	TO-247AD (IXFH)	600 V	500 W	360 mOhm	Through Hole	2600 pF	38 nC	-55 °C	150 °C	TO-247-3
Littelfuse/Commercial Vehicle Products IXFH22N60P	N-Channel	30 V	10 V	5.5 V	MOSFET (Metal Oxide)	22 A	TO-247AD (IXFH)	600 V		350 mOhm	Through Hole		58 nC	-55 °C	150 °C	TO-247-3	400 W	3600 pF
Littelfuse/Commercial Vehicle Products IXFH22N65X2	N-Channel	30 V	10 V	5.5 V	MOSFET (Metal Oxide)	22 A	TO-247 (IXTH)	650 V		160 mOhm	Through Hole	2310 pF	38 nC	-55 °C	150 °C	TO-247-3	390 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 6.76
		30	$ 4.07
		120	$ 3.52
		510	$ 3.28
		1020	$ 3.57
		2010	$ 3.35

Description

General part information

IXFH22N60P3 Series

The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings

Documents

Technical documentation and resources

Datasheet

Performance Evaluation of Silicon-Based 3-Level Vienna Rectifier in ISOPLUS SMPD Package

Technical Document