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D2PAK
Discrete Semiconductor Products

MCB200N06Y-TP

Active
Micro Commercial Components

POWER FIELD-EFFECT TRANSISTOR, 200A I(D), 60V, 0.0036OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, D2PAK-3/2

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D2PAK
Discrete Semiconductor Products

MCB200N06Y-TP

Active
Micro Commercial Components

POWER FIELD-EFFECT TRANSISTOR, 200A I(D), 60V, 0.0036OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, D2PAK-3/2

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Technical Specifications

Parameters and characteristics for this part

SpecificationMCB200N06Y-TP
Current - Continuous Drain (Id) @ 25°C200 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs93 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]5950 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]260 W
Rds On (Max) @ Id, Vgs2.6 mOhm
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id [Max]2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.95
10$ 1.62
100$ 1.29
Digi-Reel® 1$ 1.95
10$ 1.62
100$ 1.29
Tape & Reel (TR) 800$ 0.82

Description

General part information

MCB200N06 Series

N-Channel 60 V 200A (Tc) 260W (Tj) Surface Mount D2PAK

Documents

Technical documentation and resources

No documents available