Specification	NTJD4152PT1G

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	880 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	2.2 nC
Input Capacitance (Ciss) (Max) @ Vds	155 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	272 mW
Rds On (Max) @ Id, Vgs	260 mOhm
Supplier Device Package	SC70-6, SC-88, SOT-363
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.2 V

NTJD4152P Series

Dual P-Channel Small Signal MOSFET with ESD Protection -20V -0.88A 260mΩ

Part	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	FET Feature	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Power - Max [Max]
ON Semiconductor NTJD4152PT1G	1.2 V	260 mOhm	SC-88 SC70-6 SOT-363	MOSFET (Metal Oxide)	Surface Mount	2.2 nC	Logic Level Gate	880 mA	-55 °C	150 °C	2 P-Channel	20 V	155 pF	6-TSSOP SC-88 SOT-363	272 mW

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Small Signal MOSFET -20V -0.88A 260 mOhm Dual P-Channel SC88 with ESD Protection

Technical documentation and resources