Discrete Semiconductor Products

RJK2055DPA-00#J0

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MOSFET N-CH 200V 20A 8WPAK

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Discrete Semiconductor Products

Active

MOSFET N-CH 200V 20A 8WPAK

Technical Specifications

Parameters and characteristics for this part

Specification	RJK2055DPA-00#J0

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds	2400 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerWDFN
Rds On (Max) @ Id, Vgs [Max]	69 mOhm
Supplier Device Package	8-WPAK (3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Mounting Type	Technology	FET Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds
Renesas Electronics Corporation RJK2055DPA-00#J0	Surface Mount	MOSFET (Metal Oxide)	N-Channel	8-WPAK (3)	20 A	38 nC	150 °C	8-PowerWDFN	69 mOhm	200 V	10 V	30 V	2400 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 20A (Ta) 30W (Tc) Surface Mount 8-WPAK (3)

Technical documentation and resources