Discrete Semiconductor Products

SIZ920DT-T1-GE3

Obsolete

MOSFET 2N-CH 30V 40A 8POWERPAIR

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 30V 40A 8POWERPAIR

Technical Specifications

Parameters and characteristics for this part

Specification	SIZ920DT-T1-GE3

Configuration	2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C	40 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	35 nC
Input Capacitance (Ciss) (Max) @ Vds	1260 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power - Max	100 W, 39 W
Rds On (Max) @ Id, Vgs	7.1 mOhm
Supplier Device Package	8-PowerPair® (6x5)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Mounting Type	Rds On (Max) @ Id, Vgs	Configuration	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SIZ920DT-T1-GE3	Surface Mount	7.1 mOhm	2 N-Channel (Half Bridge)	35 nC	30 V	MOSFET (Metal Oxide)	8-PowerPair® (6x5)	1260 pF	39 W 100 W	-55 °C	150 °C	40 A	8-PowerWDFN	2.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 40A 39W, 100W Surface Mount 8-PowerPair® (6x5)

Technical documentation and resources