Discrete Semiconductor Products

RJK5012DPE-00#J3

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NCH SINGLE POWER MOSFET 500V 12A 620MOHM LDPAK(S)-(1)/TO-263

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Discrete Semiconductor Products

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NCH SINGLE POWER MOSFET 500V 12A 620MOHM LDPAK(S)-(1)/TO-263

Technical Specifications

Parameters and characteristics for this part

Specification	RJK5012DPE-00#J3

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	29 nC
Input Capacitance (Ciss) (Max) @ Vds	1100 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-83
Power Dissipation (Max) [Max]	100 W
Rds On (Max) @ Id, Vgs	620 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Nch Single Power Mosfet 500V 12A 620Mohm LDPAK(S)-(1)/To-263

Part	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Operating Temperature	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Technology	Power Dissipation (Max) [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs
Renesas Electronics Corporation RJK5012DPE-00#J3	29 nC	Surface Mount	150 °C	N-Channel	1100 pF	10 V	MOSFET (Metal Oxide)	100 W	30 V	12 A	SC-83	500 V	620 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

The RJK5012DPE is a Nch Single Power Mosfet 500V 12A 620Mohm LDPAK(S)-(1)/To-263.

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