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MJF47G
Discrete Semiconductor Products

MJF18004

Obsolete
ON Semiconductor

5.0 A, 450 V NPN BIPOLAR POWER TRANSISTOR

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MJF47G
Discrete Semiconductor Products

MJF18004

Obsolete
ON Semiconductor

5.0 A, 450 V NPN BIPOLAR POWER TRANSISTOR

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMJF18004
Current - Collector (Ic) (Max)5 A
Current - Collector Cutoff (Max) [Max]100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]14
Frequency - Transition13 MHz
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseTO-220-3 Full Pack
Power - Max [Max]35 W
Supplier Device PackageTO-220FP
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic750 mV
Voltage - Collector Emitter Breakdown (Max)450 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

MJF18004 Series

The MJE/MJF18004G have an applications specific state-of-the-art die designed for use in 220 V line-operated SWITCHMODE Power supplies and electronic light ballasts.