Discrete Semiconductor Products

SI7465DP-T1-GE3

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MOSFET P-CH 60V 3.2A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET P-CH 60V 3.2A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7465DP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	3.2 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	1.5 W
Rds On (Max) @ Id, Vgs	64 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Mounting Type	Technology	Package / Case	Drain to Source Voltage (Vdss)	Supplier Device Package
Vishay General Semiconductor - Diodes Division SI7465DP-T1-E3	3 V	40 nC	3.2 A	64 mOhm	P-Channel	20 V	4.5 V 10 V	-55 °C	150 °C	1.5 W	Surface Mount	MOSFET (Metal Oxide)	PowerPAK® SO-8	60 V	PowerPAK® SO-8
Vishay General Semiconductor - Diodes Division SI7465DP-T1-GE3	3 V	40 nC	3.2 A	64 mOhm	P-Channel	20 V	4.5 V 10 V	-55 °C	150 °C	1.5 W	Surface Mount	MOSFET (Metal Oxide)	PowerPAK® SO-8	60 V	PowerPAK® SO-8

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General part information

P-Channel 60 V 3.2A (Ta) 1.5W (Ta) Surface Mount PowerPAK® SO-8

Technical documentation and resources