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TO-220-3
Discrete Semiconductor Products

BUH150G

Obsolete
ON Semiconductor

15 A, 400 V NPN BIPOLAR POWER TRANSISTOR

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TO-220-3
Discrete Semiconductor Products

BUH150G

Obsolete
ON Semiconductor

15 A, 400 V NPN BIPOLAR POWER TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationBUH150G
Current - Collector (Ic) (Max) [Max]15 A
Current - Collector Cutoff (Max) [Max]100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]8
Frequency - Transition23 MHz
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseTO-220-3
Power - Max [Max]150 W
Supplier Device PackageTO-220
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic5 V
Voltage - Collector Emitter Breakdown (Max) [Max]700 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

BUH150 Series

This NPN Bipolar Power Transistor is specifically designed to sustain the large inrush current during either the start-up conditions or under a short circuit across the load.