FQD13N10LTM
ActivePOWER MOSFET, N-CHANNEL, LOGIC LEVEL, QFET<SUP>®</SUP>, 100 V, 10 A, 180 MΩ, DPAK
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FQD13N10LTM
ActivePOWER MOSFET, N-CHANNEL, LOGIC LEVEL, QFET<SUP>®</SUP>, 100 V, 10 A, 180 MΩ, DPAK
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Technical Specifications
Parameters and characteristics for this part
| Specification | FQD13N10LTM |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 10 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 12 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 520 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) | 40 W, 2.5 W |
| Rds On (Max) @ Id, Vgs | 180 mOhm |
| Supplier Device Package | TO-252AA |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Arrow | N/A | 2500 | $ 0.26 | |
| 5000 | $ 0.23 | |||
| Digikey | Cut Tape (CT) | 1 | $ 1.09 | |
| 10 | $ 0.68 | |||
| 100 | $ 0.45 | |||
| 500 | $ 0.35 | |||
| 1000 | $ 0.31 | |||
| Digi-Reel® | 1 | $ 1.09 | ||
| 10 | $ 0.68 | |||
| 100 | $ 0.45 | |||
| 500 | $ 0.35 | |||
| 1000 | $ 0.31 | |||
| Tape & Reel (TR) | 2500 | $ 0.28 | ||
| 5000 | $ 0.26 | |||
| 7500 | $ 0.24 | |||
| 12500 | $ 0.23 | |||
| Newark | Each (Supplied on Full Reel) | 1 | $ 0.32 | |
| 3000 | $ 0.31 | |||
| 6000 | $ 0.29 | |||
| 12000 | $ 0.27 | |||
| 18000 | $ 0.25 | |||
| 30000 | $ 0.24 | |||
| ON Semiconductor | N/A | 1 | $ 0.25 | |
Description
General part information
FQD13N10L Series
This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Documents
Technical documentation and resources
