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Power MOSFET, N Channel, 650 V, 65 A, 40 Milliohms, TO-247, 3 Pins, Through Hole
Discrete Semiconductor Products

FCH040N65S3-F155

NRND
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> III, EASY DRIVE, 650 V, 65 A, 40 MΩ, TO-247

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Power MOSFET, N Channel, 650 V, 65 A, 40 Milliohms, TO-247, 3 Pins, Through Hole
Discrete Semiconductor Products

FCH040N65S3-F155

NRND
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> III, EASY DRIVE, 650 V, 65 A, 40 MΩ, TO-247

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Technical Specifications

Parameters and characteristics for this part

SpecificationFCH040N65S3-F155
Current - Continuous Drain (Id) @ 25°C65 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs136 nC
Input Capacitance (Ciss) (Max) @ Vds4740 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max) [Max]417 W
Rds On (Max) @ Id, Vgs40 mOhm
Supplier Device PackageTO-247-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id [Max]4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 13.85
10$ 9.72
100$ 7.38
500$ 7.26
ON SemiconductorN/A 1$ 6.68

Description

General part information

FCH040N65S3 Series

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.