Specification	MBR2515LG

Current - Average Rectified (Io)	25 A
Current - Reverse Leakage @ Vr	15 mA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	TO-220-2
Speed	200 mA, 500 ns
Supplier Device Package	TO-220-2
Technology	Schottky
Voltage - Forward (Vf) (Max) @ If	450 mV

MBR2515L Series

15 V, 25 A Schottky Rectifier

Part	Technology	Current - Reverse Leakage @ Vr	Speed	Supplier Device Package	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case
ON Semiconductor MBR2515LG	Schottky	15 mA	200 mA 500 ns	TO-220-2	Through Hole	450 mV	25 A	125 °C	-65 C	TO-220-2

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MBR2515L Series

The Schottky Rectifier employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use in low voltage, high frequency switching power supplies, low voltage converters, O-Ring diodes and polarity protection devices.