Discrete Semiconductor Products

SI7455DP-T1-GE3

Obsolete

MOSFET P-CH 80V 28A PPAK SO-8

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 80V 28A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7455DP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	28 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	155 nC
Input Capacitance (Ciss) (Max) @ Vds	5160 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	83.3 W, 5.2 W
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Technology
Vishay General Semiconductor - Diodes Division SI7455DP-T1-E3	80 V	5160 pF	PowerPAK® SO-8	155 nC	25 mOhm	Surface Mount	20 V	5.2 W 83.3 W	28 A	PowerPAK® SO-8	P-Channel	-55 °C	150 °C	6 V 10 V	4 V	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division SI7455DP-T1-GE3	80 V	5160 pF	PowerPAK® SO-8	155 nC	25 mOhm	Surface Mount	20 V	5.2 W 83.3 W	28 A	PowerPAK® SO-8	P-Channel	-55 °C	150 °C	6 V 10 V	4 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 80 V 28A (Tc) 5.2W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources