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LFPAK56/POWER-SO8/SOT669
Discrete Semiconductor Products

BUK7Y6R0-60EX

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Freescale Semiconductor - NXP

N-CHANNEL 60 V, 6.0 MΩ STANDARD LEVEL MOSFET IN LFPAK56

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LFPAK56/POWER-SO8/SOT669
Discrete Semiconductor Products

BUK7Y6R0-60EX

Active
Freescale Semiconductor - NXP

N-CHANNEL 60 V, 6.0 MΩ STANDARD LEVEL MOSFET IN LFPAK56

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBUK7Y6R0-60EX
Current - Continuous Drain (Id) @ 25°C100 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]45.4 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds4021 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSOT-669, SC-100
Power Dissipation (Max)195 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs6 mOhm
Supplier Device PackagePower-SO8, LFPAK56
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.49
10$ 1.23
100$ 0.98
500$ 0.83
Digi-Reel® 1$ 1.49
10$ 1.23
100$ 0.98
500$ 0.83
Tape & Reel (TR) 1500$ 0.70
3000$ 0.67
7500$ 0.64
10500$ 0.64

Description

General part information

BUK7Y6R0-60E Series

Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.