Discrete Semiconductor Products

RJU60C2SDPD-E0#J2

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DIODE GEN PURP 600V 5A TO252

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Discrete Semiconductor Products

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DIODE GEN PURP 600V 5A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	RJU60C2SDPD-E0#J2

Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Reverse Recovery Time (trr)	70 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-252
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2 V

Fast Recovery Diodes

Part	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Package / Case	Supplier Device Package	Current - Average Rectified (Io)	Speed	Operating Temperature - Junction	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Current - Reverse Leakage @ Vr	Mounting Type
Renesas Electronics Corporation RJU60C2SDPD-E0#J2	2 V	70 ns	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252	5 A	200 mA 500 ns	150 °C	600 V	Standard	1 µA	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	208	$ 1.45

General part information

We offer high-performance products with low forward voltage (VF) and high-speed reverse recovery time (trr) for increasing device efficiency.

Technical documentation and resources