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Discrete Semiconductor Products

HERAF808G

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Taiwan Semiconductor Corporation

80NS, 8A, 1000V, HIGH EFFICIENT RECOVERY RECTIFIER

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Symbol, Footprint, 3D Model
Discrete Semiconductor Products

HERAF808G

Active
Taiwan Semiconductor Corporation

80NS, 8A, 1000V, HIGH EFFICIENT RECOVERY RECTIFIER

Technical Specifications

Parameters and characteristics for this part

SpecificationHERAF808G
Capacitance @ Vr, F60 pF
Current - Average Rectified (Io)8 A
Current - Reverse Leakage @ Vr10 çA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseTO-220-2 Full Pack
Reverse Recovery Time (trr)80 ns
Speed200 mA, 500 ns
Supplier Device PackageITO-220AC
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]1000 V
Voltage - Forward (Vf) (Max) @ If1.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.59
10$ 1.01
100$ 0.67
500$ 0.53
1000$ 0.48
2000$ 0.44
5000$ 0.40
10000$ 0.38

Description

General part information

HERAF808 Series

Diode 1000 V 8A Through Hole ITO-220AC