Specification	NRVBS360T3G

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	30 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	SMC, DO-214AB
Speed	200 mA, 500 ns
Supplier Device Package	SMC
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	60 V
Voltage - Forward (Vf) (Max) @ If	630 mV

NRVBS360 Series

Part	Current - Average Rectified (Io)	Speed	Supplier Device Package	Technology	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Grade	Qualification
ON Semiconductor NRVBS360T3G	3 A	200 mA 500 ns	SMC	Schottky	DO-214AB SMC	175 ░C	-65 C	630 mV	Surface Mount	60 V	30 µA
ON Semiconductor NRVBS360BT3G-VF01	4 A	200 mA 500 ns	SMB	Schottky	DO-214AA SMB	175 ░C	-65 C	630 mV	Surface Mount	60 V	30 µA	Automotive	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This device employs the Schottky Barrier principles in a large area metal-to-silicon power diode.

Technical documentation and resources