Discrete Semiconductor Products

SIZ240DT-T1-GE3

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MOSFET 2N-CH 40V 17.2A 8PWRPAIR

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Discrete Semiconductor Products

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MOSFET 2N-CH 40V 17.2A 8PWRPAIR

Technical Specifications

Parameters and characteristics for this part

Specification	SIZ240DT-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	47 A, 17.2 A, 16.9 A, 48 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs	23 nC
Gate Charge (Qg) (Max) @ Vgs	22 nC
Input Capacitance (Ciss) (Max) @ Vds	1180 pF, 1070 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power - Max	4.3 W, 33 W
Rds On (Max) @ Id, Vgs	8.05 mOhm, 8.41 mOhm
Supplier Device Package	8-PowerPair® (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.4 V

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Rds On (Max) @ Id, Vgs	Technology	Power - Max	Configuration	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SIZ240DT-T1-GE3	40 V	8-PowerPair® (3.3x3.3)	8-PowerWDFN	-55 °C	150 °C	2.4 V	23 nC	22 nC	1070 pF 1180 pF	Surface Mount	8.05 mOhm 8.41 mOhm	MOSFET (Metal Oxide)	4.3 W 33 W	2 N-Channel (Dual)	16.9 A 17.2 A 47 A 48 A

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General part information

Mosfet Array 40V 17.2A (Ta), 48A (Tc), 16.9A (Ta), 47A (Tc) 4.3W (Ta), 33W (Tc) Surface Mount 8-PowerPair® (3.3x3.3)

Technical documentation and resources