Discrete Semiconductor Products
DMN6040SSS-13
ActiveDiodes Inc
MOSFET, N-CH, 60V, 5.5A, SOIC ROHS COMPLIANT: YES
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
DMN6040SSS-13
ActiveDiodes Inc
MOSFET, N-CH, 60V, 5.5A, SOIC ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN6040SSS-13 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5.5 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 22.4 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1287 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Power Dissipation (Max) | 1.5 W |
| Rds On (Max) @ Id, Vgs | 40 mOhm |
| Supplier Device Package | 8-SO |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
DMN6040SFDEQ Series
60V Dual N-Channel Enhancement Mode MOSFET
| Part | Vgs (Max) | Mounting Type | Technology | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Grade | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Qualification | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Configuration | FET Feature | Supplier Device Package | Package / Case [y] | Package / Case [x] | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Diodes Inc | 20 V | Surface Mount | MOSFET (Metal Oxide) | 3 V | 60 V | Automotive | 5 A | 1.2 W | AEC-Q101 | 4.5 V 10 V | SOT-23-6 Thin TSOT-23-6 | N-Channel | -55 °C | 150 °C | 1287 pF | 44 mOhm | 22.4 nC | ||||||
Diodes Inc | Surface Mount | MOSFET (Metal Oxide) | 3 V | 60 V | 5 A | 8-SOIC | -55 °C | 150 °C | 1287 pF | 40 mOhm | 22.4 nC | 2 N-Channel (Dual) | Logic Level Gate | 8-SO | 3.9 mm | 0.154 in | |||||||
 Diodes Inc | 20 V | Surface Mount | MOSFET (Metal Oxide) | 3 V | 60 V | 20 A | 42 W | 4.5 V 10 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | N-Channel | -55 °C | 150 °C | 1287 pF | 40 mOhm | 22.4 nC | TO-252-3 | |||||||
 Diodes Inc | Surface Mount | MOSFET (Metal Oxide) | 3 V | 60 V | Automotive | 5 A | AEC-Q101 | 8-SOIC | -55 °C | 150 °C | 1287 pF | 40 mOhm | 22.4 nC | 2 N-Channel (Dual) | 8-SO | 3.9 mm | 0.154 in | ||||||
 Diodes Inc | 20 V | Surface Mount | MOSFET (Metal Oxide) | 3 V | 60 V | Automotive | 5.3 A | 660 mW | AEC-Q101 | 4.5 V 10 V | 6-PowerUDFN | N-Channel | -55 °C | 150 °C | 1287 pF | 22.4 nC | U-DFN2020-6 (Type E) | 38 mOhm | |||||
Diodes Inc | 20 V | Surface Mount | MOSFET (Metal Oxide) | 3 V | 60 V | 5.5 A | 1.5 W | 4.5 V 10 V | 8-SOIC | N-Channel | -55 °C | 150 °C | 1287 pF | 40 mOhm | 22.4 nC | 8-SO | 3.9 mm | 0.154 in | |||||
 Diodes Inc | 20 V | Surface Mount | MOSFET (Metal Oxide) | 3 V | 60 V | Automotive | 5 A | 1.2 W | AEC-Q101 | 4.5 V 10 V | TO-261-4 TO-261AA | N-Channel | -55 °C | 150 °C | 1287 pF | 40 mOhm | 22.4 nC | SOT-223-3 |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.45 | |
| 10 | $ 0.39 | |||
| 100 | $ 0.27 | |||
| 500 | $ 0.21 | |||
| 1000 | $ 0.17 | |||
| Digi-Reel® | 1 | $ 0.45 | ||
| 10 | $ 0.39 | |||
| 100 | $ 0.27 | |||
| 500 | $ 0.21 | |||
| 1000 | $ 0.17 | |||
| Tape & Reel (TR) | 2500 | $ 0.15 | ||
| 5000 | $ 0.14 | |||
| 12500 | $ 0.13 | |||
| 25000 | $ 0.13 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 0.48 | |
| 10 | $ 0.35 | |||
| 25 | $ 0.33 | |||
| 50 | $ 0.30 | |||
| 100 | $ 0.28 | |||
| 250 | $ 0.26 | |||
| 500 | $ 0.25 | |||
| 1000 | $ 0.24 | |||
Description
General part information
DMN6040SFDEQ Series
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Documents
Technical documentation and resources