Discrete Semiconductor Products

BAS21HMFHT116

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Rohm Semiconductor

DIODE GEN PURP 200V 200MA SSD3

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Discrete Semiconductor Products

Active

Rohm Semiconductor

DIODE GEN PURP 200V 200MA SSD3

Technical Specifications

Parameters and characteristics for this part

Specification	BAS21HMFHT116

Capacitance @ Vr, F	2.5 pF
Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	100 nA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Qualification	AEC-Q101
Reverse Recovery Time (trr)	50 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	SSD3
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.25 V

200V, 200mA, SOT-23, Single, Automotive Switching Diode

Part	Current - Average Rectified (Io)	Package / Case	Operating Temperature - Junction	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Speed	Speed	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Voltage - Forward (Vf) (Max) @ If	Qualification	Grade	Mounting Type	Supplier Device Package
Rohm Semiconductor BAS21HYFHT116	200 mA	SC-59 SOT-23-3 TO-236-3	150 ¯C	2.5 pF	100 nA	Any Speed	200 mA	50 ns	200 V	Standard	1.25 V	AEC-Q101	Automotive	Surface Mount	SOT-23
Rohm Semiconductor BAS21HMFHT116	200 mA	SC-59 SOT-23-3 TO-236-3	150 °C	2.5 pF	100 nA	Any Speed	200 mA	50 ns	200 V	Standard	1.25 V	AEC-Q101	Automotive	Surface Mount	SSD3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

BAS21HYFH is high reliability and low IRdiodes for general rectification. This product complies AEC-Q101 qualified.