Specification	SFT1452-TL-W

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	4.2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	210 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	1 W, 26 W
Rds On (Max) @ Id, Vgs	2.4 Ohm
Supplier Device Package	DPACK/TP-FA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

SFT1452 Series

Single N-Channel Power MOSFET 250V, 3A, 2.4Ω

Part	Supplier Device Package	Vgs(th) (Max) @ Id	Vgs (Max)	Power Dissipation (Max)	Technology	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Drain to Source Voltage (Vdss)	Operating Temperature	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	FET Type	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor SFT1452-TL-W	DPACK/TP-FA	4.5 V	30 V	1 W 26 W	MOSFET (Metal Oxide)	Surface Mount	4.2 nC	210 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	250 V	150 °C	2.4 Ohm	3 A	N-Channel	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

SFT1452 Series

This N-Channel Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize input capacitance and gate charge.This devices is suitable for applications with low gate charge driving requirements.

Documents

Technical documentation and resources

Package Drawing-369AH-DPAK / TP-FA

Package Drawing