Discrete Semiconductor Products

NTTFS6H854NTAG

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POWER MOSFET, SINGLE N-CHANNEL, 80V, 48A, 14.5MΩ

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Discrete Semiconductor Products

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POWER MOSFET, SINGLE N-CHANNEL, 80V, 48A, 14.5MΩ

Technical Specifications

Parameters and characteristics for this part

Specification	NTTFS6H854NTAG

Current - Continuous Drain (Id) @ 25°C	9.5 A, 44 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13 nC
Input Capacitance (Ciss) (Max) @ Vds	770 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	3.2 W, 68 W
Rds On (Max) @ Id, Vgs [Max]	14.5 mOhm
Supplier Device Package	8-WDFN (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Power MOSFET, Single N-Channel, 80V, 48A, 14.5mΩ

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs (Max)
ON Semiconductor NTTFS6H854NTAG	13 nC	3.2 W 68 W	770 pF	8-PowerWDFN	8-WDFN (3.3x3.3)	80 V	14.5 mOhm	4 V	6 V 10 V	-55 °C	175 ░C	N-Channel	MOSFET (Metal Oxide)	9.5 A 44 A	Surface Mount	20 V

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General part information

Commercial Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance.

Technical documentation and resources