Discrete Semiconductor Products

PSMN102-200Y,115

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N-CHANNEL TRENCHMOS SILICONMAX STANDARD LEVEL FET@EN-US SOIC 4-PIN

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Discrete Semiconductor Products

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N-CHANNEL TRENCHMOS SILICONMAX STANDARD LEVEL FET@EN-US SOIC 4-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN102-200Y,115

Current - Continuous Drain (Id) @ 25°C	21.5 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30.7 nC
Input Capacitance (Ciss) (Max) @ Vds	1568 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max) [Max]	113 W
Rds On (Max) @ Id, Vgs	102 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Vgs (Max)	Power Dissipation (Max) [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Technology	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type
Freescale Semiconductor - NXP PSMN102-200Y,115	-55 °C	150 °C	102 mOhm	SC-100 SOT-669	20 V	113 W	LFPAK56 Power-SO8	30.7 nC	21.5 A	10 V	MOSFET (Metal Oxide)	N-Channel	200 V	1568 pF	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 200 V 21.5A (Tc) 113W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources