Discrete Semiconductor Products

BUK9Y29-40E,115

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MOSFET N-CH 40V 25A LFPAK56

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Discrete Semiconductor Products

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MOSFET N-CH 40V 25A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9Y29-40E,115

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	664 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max) [Max]	37 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2.1 V

Part	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Grade	Supplier Device Package	Vgs(th) (Max) @ Id	Technology	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Qualification	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs
Freescale Semiconductor - NXP BUK9Y29-40E,115	10 V	-55 °C	175 ░C	664 pF	Automotive	LFPAK56 Power-SO8	2.1 V	MOSFET (Metal Oxide)	SC-100 SOT-669	5 V	N-Channel	AEC-Q101	40 V	Surface Mount	37 W	25 mOhm	25 A	5 nC

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General part information

N-Channel 40 V 25A (Tc) 37W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources