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UCC27311AQDRCRQ1
Integrated Circuits (ICs)

UCC27311AQDRCRQ1

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Texas Instruments

AUTOMOTIVE 120V 4A HALF-BRIDGE GATE DRIVER WITH 8V UVLO AND ENABLE

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UCC27311AQDRCRQ1
Integrated Circuits (ICs)

UCC27311AQDRCRQ1

Active
Texas Instruments

AUTOMOTIVE 120V 4A HALF-BRIDGE GATE DRIVER WITH 8V UVLO AND ENABLE

Technical Specifications

Parameters and characteristics for this part

SpecificationUCC27311AQDRCRQ1
Channel TypeIndependent
Current - Peak Output (Source, Sink) [custom]3.7 A
Current - Peak Output (Source, Sink) [custom]4.5 A
Driven ConfigurationHalf-Bridge
Gate TypeMOSFET (N-Channel)
GradeAutomotive
High Side Voltage - Max (Bootstrap) [Max]120 V
Input TypeNon-Inverting
Logic Voltage - VIL, VIH1.7 V, 1.9 V
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / Case10-VFDFN Exposed Pad
QualificationAEC-Q100
Rise / Fall Time (Typ) [custom]7.2 ns
Rise / Fall Time (Typ) [custom]5.5 ns
Supplier Device Package10-VSON (3x3)
Voltage - Supply [Max]17 V
Voltage - Supply [Min]8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 1813$ 2.48
Texas InstrumentsLARGE T&R 1$ 1.82
100$ 1.51
250$ 1.08
1000$ 0.81

Description

General part information

UCC27311A-Q1 Series

The UCC27311A-Q1 is a robust gate driver designed to drive two N-channel MOSFETs in a half-bridge or synchronous buck configuration with an absolute maximum bootstrap voltage of 120V. Its 3.7A peak source and 4.5A peak sink current capability allows the UCC27311A-Q1 to drive large power MOSFETs with minimized switching losses during the transition through the Miller Plateau. The switching node (HS pin) can handle negative transient voltage, which allows the high-side channel to be protected from inherent negative voltages caused by parasitic inductance and stray capacitance.

The inputs are independent of supply voltage and are able to withstand -10V and +20V absolute maximum ratings. The low-side and high-side gate drivers are matched to 4ns between the turn on and turn off of each other and are controlled throught the LI and HI input pins respectively. An on-chip 120V rated bootstrap diode eliminates the need to add discrete bootstrap diodes. Undervoltage lockout (UVLO) is provided for both the high-side and the low-side drivers which provides symmetric turn on and turn off behavior and forces the outputs low if the drive voltage is below the specified threshold.

The UCC27311A-Q1 is a robust gate driver designed to drive two N-channel MOSFETs in a half-bridge or synchronous buck configuration with an absolute maximum bootstrap voltage of 120V. Its 3.7A peak source and 4.5A peak sink current capability allows the UCC27311A-Q1 to drive large power MOSFETs with minimized switching losses during the transition through the Miller Plateau. The switching node (HS pin) can handle negative transient voltage, which allows the high-side channel to be protected from inherent negative voltages caused by parasitic inductance and stray capacitance.