Discrete Semiconductor Products

PSMN5R6-100PS,127

Obsolete

PSMN5R6-100PS - N-CHANNEL 100 V 5.6 MΩ STANDARD LEVEL MOSFET IN TO220@EN-US TO-220 3-PIN

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

PSMN5R6-100PS - N-CHANNEL 100 V 5.6 MΩ STANDARD LEVEL MOSFET IN TO220@EN-US TO-220 3-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN5R6-100PS,127

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	141 nC
Input Capacitance (Ciss) (Max) @ Vds	8061 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	306 W
Rds On (Max) @ Id, Vgs	5.6 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Package / Case	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]
Freescale Semiconductor - NXP PSMN5R6-100PS,127	-55 °C	175 ░C	10 V	100 V	8061 pF	N-Channel	TO-220-3	20 V	141 nC	5.6 mOhm	Through Hole	MOSFET (Metal Oxide)	TO-220AB	100 A	306 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 100A (Tc) 306W (Tc) Through Hole TO-220AB

Technical documentation and resources