Specification	HGTG27N120BN

Current - Collector (Ic) (Max) [Max]	72 A
Current - Collector Pulsed (Icm)	216 A
Gate Charge	270 nC
IGBT Type	NPT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	500 W
Supplier Device Package	TO-247-3
Switching Energy	2.3 mJ, 2.2 mJ
Td (on/off) @ 25°C	24 ns, 195 ns
Test Condition	3 Ohm, 960 V, 27 A, 15 V
Vce(on) (Max) @ Vge, Ic	2.7 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

HGTG27N120BN Series

1200V, NPT IGBT

Part	Td (on/off) @ 25°C	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Package / Case	Test Condition	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Switching Energy	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge	Current - Collector Pulsed (Icm)	Mounting Type	Vce(on) (Max) @ Vge, Ic	IGBT Type
ON Semiconductor HGTG27N120BN	24 ns 195 ns	72 A	TO-247-3	TO-247-3	3 Ohm 15 V 27 A 960 V	1200 V	500 W	2.2 mJ 2.3 mJ	-55 °C	150 °C	270 nC	216 A	Through Hole	2.7 V	NPT

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

HGTG27N120BN Series

HGTG27N120BN is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.