UPA2600T1R-E2-AX

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NCH SINGLE POWER MOSFET 20V 7.0A 13.8MOHM 6PINHUSON2020

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Discrete Semiconductor Products

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NCH SINGLE POWER MOSFET 20V 7.0A 13.8MOHM 6PINHUSON2020

Technical Specifications

Parameters and characteristics for this part

Specification	UPA2600T1R-E2-AX

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.9 nC
Input Capacitance (Ciss) (Max) @ Vds	870 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-WFDFN Exposed Pad
Power Dissipation (Max)	2.4 W
Rds On (Max) @ Id, Vgs	19.1 mOhm
Supplier Device Package	6-HUSON (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V

Nch Single Power Mosfet 20V 7.0A 13.8Mohm 6Pinhuson2020

Part	Operating Temperature	Technology	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds
Renesas Electronics Corporation UPA2600T1R-E2-AX	150 °C	MOSFET (Metal Oxide)	6-HUSON (2x2)	2.5 V 4.5 V	19.1 mOhm	7.9 nC	12 V	Surface Mount	7 A	6-WFDFN Exposed Pad	2.4 W	N-Channel	20 V	870 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources