Specification	UPA2631T1R-E2-AX

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	12.5 nC
Input Capacitance (Ciss) (Max) @ Vds	1240 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-WFDFN Exposed Pad
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	62 mOhm
Supplier Device Package	6-HUSON (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V

UPA2631 Series

Part	Input Capacitance (Ciss) (Max) @ Vds	Technology	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Mounting Type	Operating Temperature	Vgs (Max) [Max]	Rds On (Max) @ Id, Vgs	Package / Case	FET Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)
Renesas Electronics Corporation UPA2631T1R-E2-AX	1240 pF	MOSFET (Metal Oxide)	12.5 nC	6-HUSON (2x2)	Surface Mount	150 °C	8 V	62 mOhm	6-WFDFN Exposed Pad	P-Channel	1.8 V	4.5 V	2.5 W	6 A	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

The UPA2631T1R is a Pch Single Power Mosfet -20V -6.0A 32Mohm 6Pinhuson2020.

Technical documentation and resources