Specification	FQPF22P10

Current - Continuous Drain (Id) @ 25°C	13.2 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	50 nC
Input Capacitance (Ciss) (Max) @ Vds	1500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	45 W
Rds On (Max) @ Id, Vgs	125 mOhm
Supplier Device Package	TO-220F-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

FQPF22N30 Series

Power MOSFET, P-Channel, QFET®, -100 V, -13.2 A, 125 mΩ, TO-220F

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Technology	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)
ON Semiconductor FQPF22N30	2200 pF	30 V	300 V	56 W	MOSFET (Metal Oxide)	TO-220F-3	60 nC	12 A	10 V	N-Channel	Through Hole	-55 °C	150 °C	5 V	TO-220-3 Full Pack
ON Semiconductor FQPF22P10	1500 pF	30 V	100 V		MOSFET (Metal Oxide)	TO-220F-3	50 nC	13.2 A	10 V	P-Channel	Through Hole	-55 °C	175 ░C	4 V	TO-220-3 Full Pack	125 mOhm	45 W
ON Semiconductor FQPF22N30	2200 pF	30 V	300 V	56 W	MOSFET (Metal Oxide)	TO-220F-3	60 nC	12 A	10 V	N-Channel	Through Hole	-55 °C	150 °C	5 V	TO-220-3 Full Pack

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FQPF22N30 Series

This P-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.