Discrete Semiconductor Products

PMPB16EPX

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MOSFET P-CH 30V 7.5A DFN2020MD-6

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Discrete Semiconductor Products

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MOSFET P-CH 30V 7.5A DFN2020MD-6

Technical Specifications

Parameters and characteristics for this part

Specification	PMPB16EPX

Current - Continuous Drain (Id) @ 25°C	7.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	44 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max)	12.5 W, 2 W
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	DFN2020MD-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs (Max)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Technology
Freescale Semiconductor - NXP PMPB16EPX	25 V	2 W 12.5 W	-55 °C	150 °C	6-UDFN Exposed Pad	DFN2020MD-6	20 mOhm	2.5 V	Surface Mount	7.5 A	44 nC	P-Channel	4.5 V 10 V	30 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 30 V 7.5A (Ta) 2W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6

Technical documentation and resources