Discrete Semiconductor Products

BAT85,133

Obsolete

DIODE SCHOTTKY 30V 200MA DO34

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Discrete Semiconductor Products

Obsolete

DIODE SCHOTTKY 30V 200MA DO34

Technical Specifications

Parameters and characteristics for this part

Specification	BAT85,133

Capacitance @ Vr, F	10 pF
Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	2 µA
Mounting Type	Through Hole
Operating Temperature - Junction	125 °C
Package / Case	DO-34, DO-204AG, Axial
Reverse Recovery Time (trr)	4 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	DO-34
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	800 mV

Part	Current - Average Rectified (Io)	Operating Temperature - Junction	Capacitance @ Vr, F	Package / Case	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Mounting Type	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Speed	Speed	Reverse Recovery Time (trr)
Freescale Semiconductor - NXP BAT85,133	200 mA	125 °C	10 pF	Axial DO-204AG DO-34	800 mV	2 µA	Through Hole	Schottky	30 V	DO-34	Any Speed	200 mA	4 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 30 V 200mA Through Hole DO-34

Technical documentation and resources