Discrete Semiconductor Products

VS-MUR2020CT-M3

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DIODE ARRAY GP 200V 10A TO220-3

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Discrete Semiconductor Products

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DIODE ARRAY GP 200V 10A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	VS-MUR2020CT-M3

Current - Average Rectified (Io) (per Diode)	10 A
Current - Reverse Leakage @ Vr	15 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	TO-220-3
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220-3
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.15 V

Part	Package / Case	Reverse Recovery Time (trr)	Supplier Device Package	Current - Average Rectified (Io) (per Diode)	Current - Reverse Leakage @ Vr	Diode Configuration	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Technology
Vishay General Semiconductor - Diodes Division VS-MUR2020CT-M3	TO-220-3	35 ns	TO-220-3	10 A	15 µA	1 Pair Common Cathode	Through Hole	1.15 V	175 ░C	-65 C	200 mA 500 ns	200 V	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 1 Pair Common Cathode 200 V 10A Through Hole TO-220-3

Technical documentation and resources