Integrated Circuits (ICs)

UCC27517DBVR

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4-A/4-A SINGLE-CHANNEL GATE DRIVER WITH 5-V UVLO AND 13-NS PROP DELAY IN SOT-23 PACKAGE

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DocumentsA bite-size gate drive: replacing BJTs with an integrated solution How GaN switch integration enables low THD and high efficiency in PFC +14

Integrated Circuits (ICs)

UCC27517DBVR

Active

Texas Instruments

4-A/4-A SINGLE-CHANNEL GATE DRIVER WITH 5-V UVLO AND 13-NS PROP DELAY IN SOT-23 PACKAGE

Deep-Dive with AI

DocumentsA bite-size gate drive: replacing BJTs with an integrated solution How GaN switch integration enables low THD and high efficiency in PFC +14

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	UCC27517DBVR

Channel Type	Single
Current - Peak Output (Source, Sink) [custom]	4 A
Current - Peak Output (Source, Sink) [custom]	4 A
Driven Configuration	Low-Side
Gate Type	N-Channel MOSFET, IGBT, MOSFET (N-Channel)
Input Type	Non-Inverting, Inverting
Logic Voltage - VIL, VIH	2.4 V, 1 V
Mounting Type	Surface Mount
Number of Drivers	1
Operating Temperature [Max]	140 °C
Operating Temperature [Min]	-40 °C
Package / Case	SOT-753, SC-74A
Rise / Fall Time (Typ)	7 ns
Rise / Fall Time (Typ)	8 ns
Supplier Device Package	SOT-23-5
Voltage - Supply [Max]	18 V
Voltage - Supply [Min]	4.5 V

UCC27517 Series

Part	Gate Type	Rise / Fall Time (Typ)	Rise / Fall Time (Typ)	Channel Type	Number of Drivers	Package / Case	Voltage - Supply [Max]	Voltage - Supply [Min]	Logic Voltage - VIL, VIH	Input Type	Driven Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Mounting Type	Supplier Device Package
Texas Instruments UCC27517ADBVR	IGBT MOSFET (N-Channel) N-Channel MOSFET	7 ns	8 ns	Single	1	SC-74A SOT-753	18 V	4.5 V	1 V 2.4 V	Inverting Non-Inverting	Low-Side	-40 °C	140 °C	4 A	4 A	Surface Mount	SOT-23-5
Texas Instruments UCC27517ADBVT	IGBT MOSFET (N-Channel) N-Channel MOSFET	7 ns	8 ns	Single	1	SC-74A SOT-753	18 V	4.5 V	1 V 2.4 V	Inverting Non-Inverting	Low-Side	-40 °C	140 °C	4 A	4 A	Surface Mount	SOT-23-5
Texas Instruments UCC27517DBVT	IGBT MOSFET (N-Channel) N-Channel MOSFET	7 ns	8 ns	Single	1	SC-74A SOT-753	18 V	4.5 V	1 V 2.4 V	Inverting Non-Inverting	Low-Side	-40 °C	140 °C	4 A	4 A	Surface Mount	SOT-23-5
Texas Instruments UCC27517DBVR	IGBT MOSFET (N-Channel) N-Channel MOSFET	7 ns	8 ns	Single	1	SC-74A SOT-753	18 V	4.5 V	1 V 2.4 V	Inverting Non-Inverting	Low-Side	-40 °C	140 °C	4 A	4 A	Surface Mount	SOT-23-5

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.69
		10	$ 0.49
		25	$ 0.44
		100	$ 0.38
		250	$ 0.36
		500	$ 0.34
		1000	$ 0.33
	Digi-Reel®	1	$ 0.69
		10	$ 0.49
		25	$ 0.44
		100	$ 0.38
		250	$ 0.36
		500	$ 0.34
		1000	$ 0.33
	N/A	3910	$ 0.55
		20799	$ 0.84
	Tape & Reel (TR)	3000	$ 0.31
		6000	$ 0.31
		9000	$ 0.30
		15000	$ 0.30
		21000	$ 0.29
		30000	$ 0.29
Texas Instruments	LARGE T&R	1	$ 0.54
		100	$ 0.42
		250	$ 0.31
		1000	$ 0.22

Description

General part information

UCC27517 Series

The UCC27516 and UCC27517 single-channel, high-speed, low-side gate driver devices can effectively drive MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, UCC27516 and UCC27517 can source and sink high peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay, typically 13 ns.

The UCC27516 and UCC27517 provides 4-A source, 4-A sink (symmetrical drive) peak-drive current capability at VDD = 12 V.

The UCC27516 and UCC27517 are designed to operate over a wide VDD range of 4.5 to 18 V and wide temperature range of –40°C to 140°C. Internal undervoltage lockout (UVLO) circuitry on the VDD pin holds output low outside VDD operating range. The capability to operate at low voltage levels such as below 5 V, along with best-in-class switching characteristics, is especially suited for driving emerging wide band-gap power-switching devices such as GaN power semiconductor devices.