Discrete Semiconductor Products

GBPC3502T

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BRIDGE RECT 1P 200V 35A GBPC-T

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Discrete Semiconductor Products

Active

BRIDGE RECT 1P 200V 35A GBPC-T

Technical Specifications

Parameters and characteristics for this part

Specification	GBPC3502T

Current - Average Rectified (Io)	35 A
Current - Reverse Leakage @ Vr	5 ÁA
Diode Type	Single Phase
Mounting Type	QC Terminal
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-Square, GBPC-T
Supplier Device Package	GBPC-T
Technology	Standard
Voltage - Forward (Vf) (Max) @ If [Max]	1.1 V
Voltage - Peak Reverse (Max)	200 V

Part	Diode Type	Package / Case	Mounting Type	Voltage - Peak Reverse (Max)	Voltage - Forward (Vf) (Max) @ If	Operating Temperature [Max]	Operating Temperature [Min]	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Technology	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If [Max]
GeneSiC Semiconductor GBPC3502W	Single Phase	4-Square GBPC-W	Through Hole	200 V	1.1 V	150 °C	-55 °C	5 ÁA	35 A	Standard	GBPC-W
GeneSiC Semiconductor GBPC3502T	Single Phase	4-Square GBPC-T	QC Terminal	200 V		150 °C	-55 °C	5 ÁA	35 A	Standard	GBPC-T	1.1 V

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General part information

Bridge Rectifier Single Phase Standard 200 V QC Terminal GBPC-T

Technical documentation and resources