Discrete Semiconductor Products

RSQ045N03TR

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MOSFET N-CH 30V 4.5A TSMT6

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Discrete Semiconductor Products

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MOSFET N-CH 30V 4.5A TSMT6

Technical Specifications

Parameters and characteristics for this part

Specification	RSQ045N03TR

Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	9.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	520 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-6 Thin, TSOT-23-6
Power Dissipation (Max) [Max]	600 mW
Rds On (Max) @ Id, Vgs	38 mOhm
Supplier Device Package	TSMT6 (SC-95)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Supplier Device Package	Power Dissipation (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Grade	Operating Temperature	Technology	Qualification	Power Dissipation (Max) [Max]
Rohm Semiconductor RSQ045N03HZGTR	30 V	38 mOhm	20 V	TSMT6 (SC-95)	950 mW	Surface Mount	9.5 nC	SOT-23-6 Thin TSOT-23-6	4 V	10 V	N-Channel	4.5 A	2.5 V	520 pF	Automotive	150 °C	MOSFET (Metal Oxide)	AEC-Q101
Rohm Semiconductor RSQ045N03TR	30 V	38 mOhm	20 V	TSMT6 (SC-95)		Surface Mount	9.5 nC	SOT-23-6 Thin TSOT-23-6	4 V	10 V	N-Channel	4.5 A	2.5 V	520 pF		150 °C	MOSFET (Metal Oxide)		600 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.19

General part information

N-Channel 30 V 4.5A (Ta) 600mW (Ta) Surface Mount TSMT6 (SC-95)

Technical documentation and resources