Specification	FDT3N40TF

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	400 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6 nC
Input Capacitance (Ciss) (Max) @ Vds	225 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	2 W
Rds On (Max) @ Id, Vgs	3.4 Ohm
Supplier Device Package	SOT-223-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FDT3N40 Series

Power MOSFET, N-Channel, UniFETTM, 400V, 2A, 3.4Ω, SOT-223

Part	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package	Technology	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDT3N40TF	10 V	TO-261-4 TO-261AA	3.4 Ohm	225 pF	N-Channel	2 W	6 nC	30 V	400 V	2 A	Surface Mount	5 V	SOT-223-4	MOSFET (Metal Oxide)	-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDT3N40 Series

UniFETTMMOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.