Discrete Semiconductor Products

SIC1060PL8-TP

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DIODE SIL CARB 650V 10A DFN8080A

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Discrete Semiconductor Products

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DIODE SIL CARB 650V 10A DFN8080A

Technical Specifications

Parameters and characteristics for this part

Specification	SIC1060PL8-TP

Capacitance @ Vr, F	452 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	44 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	4-PowerVSFN
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	DFN8080A
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.6 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Supplier Device Package	Current - Reverse Leakage @ Vr	Package / Case	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Speed	Capacitance @ Vr, F	Mounting Type	Voltage - Forward (Vf) (Max) @ If
Micro Commercial Components SIC1060P-BP	650 V	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	TO-220AC	44 µA	TO-220-2	10 A	0 ns	No Recovery Time	36 pF	Through Hole	1.6 V
Micro Commercial Components SIC1060PL8-TP	650 V	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	DFN8080A	44 µA	4-PowerVSFN	10 A	0 ns	No Recovery Time	452 pF	Surface Mount	1.6 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 10A Surface Mount DFN8080A

Technical documentation and resources