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CUHS20S60,H3F
Discrete Semiconductor Products

CUHS20S60,H3F

Active
Toshiba Semiconductor and Storage

DIODES, 60 V/2.0 A SCHOTTKY BARRIER DIODE, SOD-323HE(US2H)

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CUHS20S60,H3F
Discrete Semiconductor Products

CUHS20S60,H3F

Active
Toshiba Semiconductor and Storage

DIODES, 60 V/2.0 A SCHOTTKY BARRIER DIODE, SOD-323HE(US2H)

Technical Specifications

Parameters and characteristics for this part

SpecificationCUHS20S60,H3F
Capacitance @ Vr, F290 pF
Current - Average Rectified (Io)2 A
Current - Reverse Leakage @ Vr650 µA
Mounting TypeSurface Mount
Operating Temperature - Junction150 ¯C
Package / Case2-SMD, Flat Leads
Speed500 ns, 200 mA
Supplier Device PackageUS2H
TechnologySchottky
Voltage - DC Reverse (Vr) (Max) [Max]60 V
Voltage - Forward (Vf) (Max) @ If [Max]530 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.48
10$ 0.30
100$ 0.19
500$ 0.14
1000$ 0.13
Digi-Reel® 1$ 0.48
10$ 0.30
100$ 0.19
500$ 0.14
1000$ 0.13
N/A 4691$ 0.10
Tape & Reel (TR) 3000$ 0.11
6000$ 0.10
9000$ 0.09
15000$ 0.09
21000$ 0.08
30000$ 0.08
75000$ 0.07

Description

General part information

CUHS20S60 Series

Diodes, 60 V/2.0 A Schottky Barrier Diode, SOD-323HE(US2H)