Discrete Semiconductor Products

SQJ951EP-T1_BE3

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MOSFET 2P-CH 30V 30A PPAK SO8

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Discrete Semiconductor Products

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MOSFET 2P-CH 30V 30A PPAK SO8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJ951EP-T1_BE3

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs [Max]	50 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1680 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8 Dual
Power - Max [Max]	56 W
Qualification	AEC-Q101
Supplier Device Package	PowerPAK® SO-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Configuration	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Drain to Source Voltage (Vdss)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Power - Max [Max]	Grade	Technology
Vishay General Semiconductor - Diodes Division SQJ951EP-T1_BE3	2 P-Channel	PowerPAK® SO-8 Dual	1680 pF	AEC-Q101	30 V	PowerPAK® SO-8 Dual	50 nC	30 A	2.5 V	-55 °C	175 ░C	Surface Mount	56 W	Automotive	MOSFET (Metal Oxide)

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General part information

Mosfet Array 30V 30A (Tc) 56W (Tc) Surface Mount PowerPAK® SO-8 Dual

Technical documentation and resources