IXFN90N85X
ActiveBIPOLAR (BJT) SINGLE TRANSISTOR, N CHANNEL, 90 A, 850 V, 0.041 OHM, 10 V, 5.5 V
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IXFN90N85X
ActiveBIPOLAR (BJT) SINGLE TRANSISTOR, N CHANNEL, 90 A, 850 V, 0.041 OHM, 10 V, 5.5 V
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Technical Specifications
Parameters and characteristics for this part
| Specification | IXFN90N85X |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 90 A |
| Drain to Source Voltage (Vdss) | 850 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 340 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 13300 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-227-4, miniBLOC |
| Power Dissipation (Max) [Max] | 1200 W |
| Rds On (Max) @ Id, Vgs | 41 mOhm |
| Supplier Device Package | SOT-227B |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5.5 V |
Pricing
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Description
General part information
IXFN90N85X Series
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings
Documents
Technical documentation and resources