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SOT 1023
Discrete Semiconductor Products

NVMYS011N04CTWG

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ON Semiconductor

POWER MOSFET 40 V, 12 MΩ, 35 A, SINGLE N-CHANNEL

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SOT 1023
Discrete Semiconductor Products

NVMYS011N04CTWG

Active
ON Semiconductor

POWER MOSFET 40 V, 12 MΩ, 35 A, SINGLE N-CHANNEL

Technical Specifications

Parameters and characteristics for this part

SpecificationNVMYS011N04CTWG
Current - Continuous Drain (Id) @ 25°C13 A, 35 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs7.9 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]420 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSOT-1023, 4-LFPAK
Power Dissipation (Max)3.8 W, 28 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs12 mOhm
Supplier Device PackageLFPAK4
Supplier Device Package [x]5
Supplier Device Package [y]6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.33
10$ 0.84
100$ 0.56
500$ 0.43
1000$ 0.40
Digi-Reel® 1$ 1.33
10$ 0.84
100$ 0.56
500$ 0.43
1000$ 0.40
Tape & Reel (TR) 3000$ 0.35
6000$ 0.32
9000$ 0.31
NewarkEach (Supplied on Cut Tape) 1$ 0.73
10$ 0.71
25$ 0.64
50$ 0.58
100$ 0.52
250$ 0.46
500$ 0.41
1000$ 0.37
ON SemiconductorN/A 1$ 0.29

Description

General part information

NVMYS011N04C Series

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.