Discrete Semiconductor Products

PSDD0860S1_L2_00001

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600V FAST RECOVERY DIODE / LOW T

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Discrete Semiconductor Products

Active

600V FAST RECOVERY DIODE / LOW T

Technical Specifications

Parameters and characteristics for this part

Specification	PSDD0860S1_L2_00001

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Reverse Recovery Time (trr)	55 ns
Speed	500 ns, 200 mA
Supplier Device Package	TO-252AA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If [Max]	2.3 V

Part	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Mounting Type	Supplier Device Package	Reverse Recovery Time (trr)	Technology	Speed	Package / Case	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If
Panjit International Inc. PSDD0860S1_L2_00001	-55 °C	150 °C	Surface Mount	TO-252AA	55 ns	Standard	200 mA 500 ns	DPAK (2 Leads + Tab) SC-63 TO-252-3	100 µA	2.3 V	600 V	8 A
Panjit International Inc. PSDD0860L1_L2_00001	-55 °C	150 °C	Surface Mount	TO-252AA	90 ns	Standard	200 mA 500 ns	DPAK (2 Leads + Tab) SC-63 TO-252-3	100 µA	1.8 V	600 V	8 A	8 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 8A Surface Mount TO-252AA

Technical documentation and resources