Discrete Semiconductor Products

RJK0602DPN-E0#T2

Obsolete

NCH SINGLE POWER MOSFET 60V 100A 3.9MOHM TO-220AB

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Discrete Semiconductor Products

Obsolete

NCH SINGLE POWER MOSFET 60V 100A 3.9MOHM TO-220AB

Technical Specifications

Parameters and characteristics for this part

Specification	RJK0602DPN-E0#T2

Current - Continuous Drain (Id) @ 25°C	110 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	90 nC
Input Capacitance (Ciss) (Max) @ Vds	6450 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	3.9 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Nch Single Power Mosfet 60V 100A 3.9Mohm To-220Ab

Part	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	FET Type	Operating Temperature	Technology	Drain to Source Voltage (Vdss)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds
Renesas Electronics Corporation RJK0602DPN-E0#T2	150 W	3.9 mOhm	20 V	10 V	90 nC	110 A	Through Hole	TO-220AB	N-Channel	150 °C	MOSFET (Metal Oxide)	60 V	TO-220-3	6450 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

The RJK0602DPN-E0 is a Nch Single Power Mosfet 60V 100A 3.9Mohm To-220Ab.

Technical documentation and resources