
LM74801MDRRR
Active3-V TO 65-V BACK-TO-BACK NFET IDEAL DIODE CONTROLLER, -55°C TO 125°C
Deep-Dive with AI
Search across all available documentation for this part.

LM74801MDRRR
Active3-V TO 65-V BACK-TO-BACK NFET IDEAL DIODE CONTROLLER, -55°C TO 125°C
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | LM74801MDRRR |
|---|---|
| Applications | General Purpose |
| Current - Output (Max) [Max] | 2.6 A |
| Current - Supply | 413 µA |
| FET Type | N-Channel |
| Internal Switch(s) | False |
| Mounting Type | Wettable Flank, Surface Mount |
| Operating Temperature [Max] | 125 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 12-WFDFN Exposed Pad |
| Ratio - Input:Output [custom] | 1:1 |
| Supplier Device Package | 12-WSON (3x3) |
| Type | N+1 ORing Controller |
| Voltage - Supply [Max] | 65 V |
| Voltage - Supply [Min] | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 5.35 | |
| 10 | $ 4.81 | |||
| 25 | $ 4.54 | |||
| 100 | $ 3.94 | |||
| 250 | $ 3.74 | |||
| 500 | $ 3.35 | |||
| 1000 | $ 2.83 | |||
| Digi-Reel® | 1 | $ 5.35 | ||
| 10 | $ 4.81 | |||
| 25 | $ 4.54 | |||
| 100 | $ 3.94 | |||
| 250 | $ 3.74 | |||
| 500 | $ 3.35 | |||
| 1000 | $ 2.83 | |||
| Tape & Reel (TR) | 3000 | $ 2.69 | ||
| Texas Instruments | LARGE T&R | 1 | $ 3.23 | |
| 100 | $ 2.66 | |||
| 250 | $ 1.91 | |||
| 1000 | $ 1.44 | |||
Description
General part information
LM74800 Series
The LM7480 ideal diode controller drives and controls external back to back N-channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control and overvoltage protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V and 24-V input powered systems. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated ideal diode controller (DGATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. With a second MOSFET in the power path the device allows load disconnect (ON/OFF control) and overvoltage protection using HGATE control. The device features an adjustable overvoltage cut-off protection feature. LM7480 has two variants, LM74800 and LM74801. LM74800 employs reverse current blocking using linear regulation and comparator scheme versus LM74801, which supports a comparator based scheme. With common-drain configuration of the power MOSFETs, the mid-point can be utilized for ORing designs using another ideal diode. The LM7480 has a maximum voltage rating of 65 V. The loads can be protected from extended overvoltage transients like 200-V unsuppressed load dumps in 24-V battery systems by configuring the device with external MOSFETs in common source topology.
The LM7480 ideal diode controller drives and controls external back to back N-channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control and overvoltage protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V and 24-V input powered systems. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated ideal diode controller (DGATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. With a second MOSFET in the power path the device allows load disconnect (ON/OFF control) and overvoltage protection using HGATE control. The device features an adjustable overvoltage cut-off protection feature. LM7480 has two variants, LM74800 and LM74801. LM74800 employs reverse current blocking using linear regulation and comparator scheme versus LM74801, which supports a comparator based scheme. With common-drain configuration of the power MOSFETs, the mid-point can be utilized for ORing designs using another ideal diode. The LM7480 has a maximum voltage rating of 65 V. The loads can be protected from extended overvoltage transients like 200-V unsuppressed load dumps in 24-V battery systems by configuring the device with external MOSFETs in common source topology.
Documents
Technical documentation and resources