Discrete Semiconductor Products

RZQ045P01TR

NRND

MOSFET P-CH 12V 4.5A TSMT6

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Discrete Semiconductor Products

NRND

MOSFET P-CH 12V 4.5A TSMT6

Technical Specifications

Parameters and characteristics for this part

Specification	RZQ045P01TR

Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	1.5 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	31 nC
Input Capacitance (Ciss) (Max) @ Vds	2450 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-6 Thin, TSOT-23-6
Power Dissipation (Max) [Max]	1.25 W
Rds On (Max) @ Id, Vgs	35 mOhm
Supplier Device Package	TSMT6 (SC-95)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

Part	FET Type	Mounting Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Technology	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package
Rohm Semiconductor RZQ045P01TR	P-Channel	Surface Mount	SOT-23-6 Thin TSOT-23-6	2450 pF	1.25 W	12 V	10 V	150 °C	4.5 A	1.5 V 4.5 V	1 V	MOSFET (Metal Oxide)	35 mOhm	31 nC	TSMT6 (SC-95)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 12 V 4.5A (Ta) 1.25W (Ta) Surface Mount TSMT6 (SC-95)

Technical documentation and resources